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Tuesday, August 17, 2010
3:00 PM - 4:00 PM
CNLS Conference Room (TA-3, Bldg 1690)

Seminar

Spin Torque Transfer Magnetic Random Access Memory (STT-RAM)—Is it a Universal Memory?

Stuart Wolf
University of Virginia

I will present an overview of a non-volatile magnetic random access memory (MRAM) that uses magnetic tunnel junctions as magneto-resistive elements and present the current state of the art and its limitations. I will show how these limitations can be overcome using spin torque transfer switching and then describe our efforts in this regard. This memory is fast, dense, non-volatile and very low power. It is a candidate for becoming a universal memory replacing SRAM, DRAM and Flash! We are exploring novel materials for both electrodes and tunnel barriers working with a small company Grandis Inc.

Host: Gennady Berman